Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.2A (Ta)
DescriptionMOSFET P-CH 30V 4.2A SO.
Detailed DescriptionP-Channel 30 V 4.2A (Ta.
Digi-Key Part Number2516-RM4P30S6TR-ND - Ta.
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .2.5V, 10V
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss.880 pF @ 15 V
ManufacturerRectron USA
Manufacturer Product Nu.RM4P30S6
MfrRectron USA
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6
Power Dissipation (Max)1.2W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs55mOhm @ 4.2A, 10V
Series-
Supplier Device PackageSOT-23-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.3V @ 250?A
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