mpn
BSS138N-E6327
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
230mA (Ta)
Drain to Source Voltage.
60 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
1.4 nC @ 10 V
Input Capacitance (Ciss.
41 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)
360mW (Ta)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
3.5Ohm @ 230mA, 10V
Series
SIPMOS?
Supplier Device Package
PG-SOT23
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
1.4V @ 250?A