Infineon Technologies IPW65R090CFD7XKSA1

mpnIPW65R090CFD7XKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPW65R
Category	Discrete Semiconductor .
Current - Continuous Dr.	25A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	53 nC @ 10 V
Input Capacitance (Ciss.	2513 pF @ 400 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	127W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 12.5A, 10V
Series	CoolMOS? CFD7
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 630?A

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