Attributes

Key Value
Base Product NumberPMPB215
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.8A (Ta)
DescriptionMOSFET N-CH 80V 2.8A 6D.
Detailed DescriptionN-Channel 80 V 2.8A (Ta.
Digi-Key Part Number1727-PMPB215ENEA/FXTR-N.
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .7.2 nC @ 10 V
Input Capacitance (Ciss.215 pF @ 40 V
ManufacturerNexperia USA Inc.
Manufacturer Product Nu.PMPB215ENEA/FX
Manufacturer Standard L.8 Weeks
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.6W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs230mOhm @ 1.9A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.7V @ 250?A
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