IXYS IXTP14N60P

mpnIXTP14N60P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	14A (Tc)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	36nC @ 10V
Input Capacitance (Ciss.	2500pF @ 25V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	550mOhm @ 7A, 10V
Series	PolarHV?
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5.5V @ 250?A

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