Attributes

Key Value
Base Product NumberFQD2N90
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.7A (Tc)
DescriptionMOSFET N-CH 900V 1.7A D.
Detailed DescriptionN-Channel 900 V 1.7A (T.
Digi-Key Part NumberFQD2N90TMTR-ND - Tape &.
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15 nC @ 10 V
Input Capacitance (Ciss.500 pF @ 25 V
Manufactureronsemi
Manufacturer Product Nu.FQD2N90TM
Manufacturer Standard L.48 Weeks
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.2Ohm @ 850mA, 10V
SeriesQFET?
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760155139.7429