Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Ta)
Drain to Source Voltage.40 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33.9 nC @ 10 V
Input Capacitance (Ciss.1900 pF @ 25 V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)80W
Product StatusActive
Rds On (Max) @ Id, Vgs11.2mOhm @ 12A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.8V @ 1mA
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