Attributes

Key Value
Base Product NumberIPP26C
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35A (Tc)
DescriptionMOSFET N-CH 85V 35A TO2.
Detailed DescriptionN-Channel 85 V 35A (Tc).
Digi-Key Part NumberIPP26CNE8NG-ND
Drain to Source Voltage.85 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .31 nC @ 10 V
Input Capacitance (Ciss.2070 pF @ 40 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP26CNE8N G
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)71W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs26mOhm @ 35A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 39?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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