Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 10 V
Input Capacitance (Ciss.1600 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.5W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs135mOhm @ 10A, 10V
SeriesUltraFET?
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id1V @ 250?A
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