Panjit International Inc. PJD4NA65H_L2_00001

mpnPJD4NA65H_L2_00001
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	16.1 nC @ 10 V
Input Capacitance (Ciss.	423 pF @ 25 V
Mfr	Panjit International In.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	34W (Tc)
Rds On (Max) @ Id, Vgs	3.75Ohm @ 1.5A, 10V
Series	-
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

As an Amazon Associate I earn from qualifying purchases.

1760208684.1317