Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Tc)
Drain to Source Voltage.600V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11nC @ 10V
Input Capacitance (Ciss.295pF @ 25V
MfrAlpha & Omega Semicondu.
Mounting TypeThrough Hole
Operating Temperature-50?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IP.
Part StatusActive
Power Dissipation (Max)57W (Tc)
Rds On (Max) @ Id, Vgs4.7Ohm @ 1A, 10V
Series-
Supplier Device PackageTO-251
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 250?A
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