Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Drain (Idss) .150 mA @ 20 V
Current Drain (Id) - Max100 pA
FET TypeN-Channel
Input Capacitance (Ciss.14pF @ 20V
MfrCentral Semiconductor C.
Mounting TypeThrough Hole
Operating Temperature-65?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-206AA, TO-18-3 Metal.
Power - Max1.8 W
Product StatusActive
Resistance - RDS(On)30 Ohms
Series-
Supplier Device PackageTO-18
Voltage - Breakdown (V(.40 V
Voltage - Cutoff (VGS o.10 V @ 1 nA
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