Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .12 nC @ 2.5 V
Input Capacitance (Ciss.405 pF @ 10 V
MfrComchip Technology
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)1W (Ta)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs110mOhm @ 3A, 4.5V
SeriesCMS
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1V @ 250?A
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