Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.65 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14 nC @ 10 V
Input Capacitance (Ciss.825 pF @ 30 V
MfrDComponents
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)42W (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 10A, 10V
Series-
Supplier Device PackageTO-252-3 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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