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DIODES DMN3190LDW-13
manufacturer:
Description:
MOSFET Dual N-Ch 30V 1A Enhanc. SOT363
Weight:
4.4e-05
Weight:
4.4e-05 LB
Preferred Price:
7.54
Price:
7.54
Min Simple Price:
0.06672
Absolute Min Price:
5.74
Min Price:
5.74
Dimensions:
[4.0, 4.0, 2.0]
qty:
1
simpleSku:
DU1NzM:::DMN3190LDW-13
sku:
DU1NzM::MS:DMN3190LDW-13@x50
condition:
11
seller:
Future Electronics
amzMan:
diodes
HazMat:
False
DropShip:
False

Attributes

Key ^Value
Base Product NumberDMN3190
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C1A
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds87pF @ 20V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max320mW
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 1.3A, 10V
Series-
Supplier Device PackageSOT-363
Vgs(th) (Max) @ Id2.8V @ 250?A

All Prices

ImgSellerSupplier SKURequested Price ^Calc MOQ PriceMOQIn StockLead TimeBrandWeightPreferred Tier
Future Electronics20888070.06672667.21000010000Diodes Incorporated0.06672 @ Qty: 10000+
Digi-Key52184460.095634573.8422536110000Diodes Incorporated0.095634 @ Qty: 10000+

Diodes DMN3190LDW-13 Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363-50 Item(s)

Diodes DMN3190LDW-13 Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363-50 Item(s)zoom