Attributes

Key Value
Base Product NumberDMG8N65
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .30 nC @ 10 V
Input Capacitance (Ciss.1217 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)125W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.3Ohm @ 4A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
prev