Attributes

Key Value
Base Product NumberDMN2015
CategoryDiscrete Semiconductor .
Current - Continuous Dr.15.2A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .42.3 nC @ 10 V
Input Capacitance (Ciss.1439 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.8W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs9mOhm @ 8.5A, 4.5V
Series-
Supplier Device PackageU-DFN2020-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.2V @ 250?A
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