| Alternate Part No. | 621-DMN2019UTS-13 | 
| Base Part Number, Base Product Number | DMN2019 | 
| Brand, Manufacturer, Mfr | Diodes Incorporated | 
| Case | TSSOP8 | 
| Category | Discrete Semiconductor Products | 
| Channel Mode | Enhancement | 
| Configuration | Dual | 
| Current - Continuous Drain (Id) @ 25?C | 5.4A | 
| Drain current | 4.3A | 
| Drain to Source Voltage (Vdss), Drain-source voltage | 20V | 
| Fall Time | 234 ns | 
| FET Feature | Logic Level Gate | 
| FET Type | 2 N-Channel (Dual) Common Drain | 
| Gate charge | 8.8nC | 
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | 
| Gate-source voltage | ?12V | 
| Id - Continuous Drain Current | 5.4 A | 
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | 
| Kind of channel | enhanced | 
| Kind of package | reel, | 
| Lead Free Status / RoHS Status | RoHS Compliant | 
| Manufacturer Part No., Manufacturer Part Number | DMN2019UTS-13 | 
| Manufacturer Standard Lead Time | 20 Weeks | 
| Maximum Operating Temperature | + 150 C | 
| Minimum Operating Temperature | - 55 C | 
| Mounting | SMD | 
| Mounting Style | SMD/SMT | 
| Mounting Type | Surface Mount | 
| On-state resistance | 31m? | 
| Operating Temperature | -55, -55?C ~ 150?C (TJ) | 
| Package | Tape & Reel (TR) | 
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 
| Package/Case | TSSOP-8 | 
| Packaging | Reel | 
| Part Status | Active | 
| Pd - Power Dissipation | 780 mW | 
| Polarisation | unipolar | 
| Power - Max, Power dissipation | 780mW | 
| Product Category | MOSFET | 
| Pulsed drain current | 30A | 
| Qg - Gate Charge | 8.8 nC | 
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 7A, 10V | 
| Rds On - Drain-Source Resistance | 24 mOhms | 
| Rise Time | 78 ns | 
| Series | DMN2019U, - | 
| Standard Package | 2,500 | 
| Supplier Device Package | 8-TSSOP | 
| Transistor Polarity | N-Channel | 
| Type of transistor | N-MOSFET | 
| Typical Turn-Off Delay Time | 562 ns | 
| Vds - Drain-Source Breakdown Voltage | 20 V | 
| Vgs - Gate-Source Breakdown Voltage | 12 V | 
| Vgs th - Gate-Source Threshold Voltage | 0.95 V | 
| Vgs(th) (Max) @ Id | 950mV @ 250?A, 950mV @ 250 |