Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.6A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.9 nC @ 4.5 V
Input Capacitance (Ciss.485 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)800mW
Product StatusActive
Rds On (Max) @ Id, Vgs27mOhm @ 6.5A, 4.5V
Series-
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id900mV @ 250?A
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