Attributes

Key Value
Base Product NumberDMN52
CategoryDiscrete Semiconductor .
Current - Continuous Dr.350mA (Ta)
Drain to Source Voltage.50 V
Drive Voltage (Max Rds .1.8V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .1.5 nC @ 10 V
Input Capacitance (Ciss.40 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-523
Power Dissipation (Max)500mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 5V
Series-
Supplier Device PackageSOT-523
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.2V @ 250?A
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