| Additional Feature | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID), Drain Current-Max (ID) | 300 mA |
| Drain-source On Resistance-Max | 3 ? |
| DS Breakdown Voltage-Min | 50 V |
| Feedback Cap-Max (Crss) | 5 pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Manufacturer | Diodes Incorporated |
| Manufacturer Part Number | DMN5L06KQ-7 |
| Moisture Sensitivity Level, Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SMALL OUTLINE, R-PDSO-G3 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |