Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100mA (Ta)
Drain to Source Voltage.60 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .0.45 nC @ 4.5 V
Input Capacitance (Ciss.32 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / Case3-UFDFN
Part StatusActive
Rds On (Max) @ Id, Vgs2Ohm @ 100mA, 4V
Series-
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250?A
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