Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta), 42A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .34 nC @ 10 V
Input Capacitance (Ciss.1799 pF @ 15 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)1W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs15mOhm @ 8A, 10V
Series-
Supplier Device PackagePowerDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id2.5V @ 250?A
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