Attributes

Key Value
Base Product NumberDMTH10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.28A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .33.3 nC @ 10 V
Input Capacitance (Ciss.1871 pF @ 50 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.1W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs30mOhm @ 20A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 250?A
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