Attributes

Key Value
Base Product NumberDMTH47
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13.6A (Ta), 49A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .12.3 nC @ 10 V
Input Capacitance (Ciss.881 pF @ 20 V
MfrDiodes Incorporated
Mounting TypeSurface Mount, Wettable.
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / Case8-PowerVDFN
Power Dissipation (Max)2.9W (Ta), 37.5W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs8.9mOhm @ 20A, 10V
Series-
Supplier Device PackagePowerDI3333-8 (SWP) Typ.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.3V @ 250?A
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