Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.8A (Ta), 5.3A (Tc)
Drain to Source Voltage.35 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .46 nC @ 10 V
Input Capacitance (Ciss.825 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Power Dissipation (Max)2W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs75mOhm @ 2.4A, 10V
Series-
Supplier Device PackageSOT-223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1V @ 250?A
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