| @Ic (test) (A) | 1.0 |
| @VCE (V) | 4.0 |
| Case | TO218 |
| Derate Above 25?C | 200m |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE | 35 |
| Ic Max. (A) | 3.0 |
| Icbo Max. @Vcb Max. (A) | 100u |
| Manufacturer | Diverse |
| Max. hFE | 320 |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 25 |
| Maximum Collector Current |Ic max| | 3 A |
| Maximum Collector Power Dissipation (Pc) | 25 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 4 V |
| Oper. Temp (?C) Max. | 140 |
| Pinout Equivalence Number | 3-15 |
| Polarity | NPN |
| R(sat) (?) | 500m |
| SKU | 766550 |
| Surface Mounted Yes/No | NO |
| t(f) Max. (S) | 3.0u-+ |
| Tr Max. (s) | 300n- |
| Trans. Freq (Hz) Min. | 6.0M |
| Transition Frequency (ft): | 3 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO, Vbr CEO | 50 |