Fairchild Semiconductor FDG313N

B00LQQ7C6M

Fairchild Semiconductor FDG313N N CHANNEL MOSFET, 25V, 950mA, SC-70

Fairchild Semiconductor FDG313N N CHANNEL MOSFET, 25V, 950mA, SC-70zoom

Attributes

Key Value
Base Product NumberFDG313
BrandON Semiconductor
CategoryDiscrete Semiconductor .
Channel ModeChannel Mode
Channel TypeChannel Type
Current - Continuous Dr.950mA (Ta)
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .2.7V, 4.5V
FET Feature-
FET TypeN-Channel
Forward Diode VoltageForward Diode Voltage
Gate Charge (Qg) (Max) .2.3 nC @ 4.5 V
Height1mm
Input Capacitance (Ciss.50 pF @ 10 V
Length2mm
Maximum Continuous Drai.950 mA
Maximum Drain Source Re.760 m?
Maximum Drain Source Vo.Maximum Drain Source Vo.
Maximum Gate Source Vol.Maximum Gate Source Vol.
Maximum Operating Tempe.+150 ?C
Maximum Power Dissipati.750 mW
MfrFairchild Semiconductor
Minimum Gate Threshold .0.65V
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .1
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case6-TSSOP, SC-88, SOT-363
Package TypeSOT-363 (SC-70)
Pin CountPin Count
Power Dissipation (Max)750mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs450mOhm @ 500mA, 4.5V
SeriesPowerTrench, -
StockStock
Supplier Device PackageSC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
Transistor ConfigurationSingle
Transistor MaterialTransistor Material
Typical Gate Charge @ V.Typical Gate Charge @ V.
Vgs (Max)?8V
Vgs(th) (Max) @ Id1.5V @ 250?A
Width1.25mm

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18202860.223821446Fairchild Semiconductor0.22382 @ 1
AvnetFDG313N0.271233370ON Semiconductor0.27 @ 1233
Digi-Key125942050.282972972973925370Fairchild Semiconductor0.282972972973 @ 925
thumbzoomRS Delivers806-33710.711620370ON Semiconductor0.7116 @ 20
RadwellFDG313N1.061446FAIRCHILD SEMICONDUCTOR1.06 @ 1
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