Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.33A (Tc)
DescriptionPOWER FIELD-EFFECT TRAN.
Detailed DescriptionN-Channel 100 V 33A (Tc.
Digi-Key Part Number2156-FQP33N10-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .51 nC @ 10 V
Input Capacitance (Ciss.1500 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.FQP33N10
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)127W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs52mOhm @ 16.5A, 10V
SeriesQFET?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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