Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.66A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .85 nC @ 20 V
Input Capacitance (Ciss.1300 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)150W (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 66A, 10V
SeriesUltraFET?
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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