Fairchild Semiconductor IRFW630BTM_FP001

mpnIRFW630BTM_FP001
brandname: Fairchild Semiconductor
manufacturername: Fairchild Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	9A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	720 pF @ 25 V
Mfr	Fairchild Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	3.13W (Ta), 72W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	400mOhm @ 4.5A, 10V
Series	-
Supplier Device Package	D2PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A