Attributes

Key Value
Base Product NumberISL9
CategoryDiscrete Semiconductor .
Current - Continuous Dr.75A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .300 nC @ 10 V
Input Capacitance (Ciss.11000 pF @ 15 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)345W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.3mOhm @ 75A, 10V
SeriesUltraFET?
Supplier Device PackageI2PAK (TO-262)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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