Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1A (Tj)
DescriptionN-CHANNEL POWER MOSFET
Detailed DescriptionN-Channel 600 V 1A (Tj).
Digi-Key Part Number2156-SSS1N60B-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .7.7 nC @ 10 V
Input Capacitance (Ciss.215 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.SSS1N60B
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)17W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs12Ohm @ 500mA, 10V
Series-
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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