| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 30A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| FET Feature, Power Dissipation (Max), Series | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 241 pF @ 400 V |
| Mfr | GaNPower |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case, Supplier Device Package | Die |
| Part Status | Active |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5mA |