Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)1.0
C(ob) (F)4.5p
CaseTO18
Collector Capacitance (.7 pF
Derate (Amb) (W/?C)3.6m
Forward Current Transfe.40
hfe40
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)10u
ManufacturerGeneral Electric
Max. Operating Junction.125 ?C
Max. PD (W)360m
Maximum Collector Curre.0.2 A
Maximum Collector Power.0.36 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.15 V
Maximum Emitter-Base Vo.5 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.N/A
PolarityNPN
SKU711544
Surface Mounted Yes/NoNO
t(f) Max. (S)18n+
t(on) Delay (S)12n
t(stor) Max. (S)18n
Tr Max. (s)12n
Trans. Freq (Hz) Min.350M
Transition Frequency (f.350 MHz
TypeTransistor Silicon NPN
Vbr CBO40
Vbr CEO15
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