| @Ic (A) | 10m |
| @VCE (test) (V) | 1.0 |
| C(ob) (F) | 6p |
| Case | TO18 |
| Collector Capacitance (Cc) | 6 pF |
| Derate (Amb) (W/?C) | 3.6m |
| Forward Current Transfer Ratio (hFE), MIN, hfe | 30 |
| Ic Max. (A) | 200m |
| Icbo Max. @Vcb Max. (A) | 25n |
| Manufacturer | General Electric |
| Max. Operating Junction Temperature (Tj) | 135 ?C |
| Max. PD (W) | 360m |
| Maximum Collector Current |Ic max| | 0.2 A |
| Maximum Collector Power Dissipation (Pc) | 0.36 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 15 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | N/A |
| Polarity | NPN |
| SKU | 711518 |
| Surface Mounted Yes/No | NO |
| t(stor) Max. (S) | 35n |
| Tr Max. (s) | 40n |
| Trans. Freq (Hz) Min. | 300M |
| Transition Frequency (ft): | 300 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 40 |
| Vbr CEO | 15 |