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Generic 2N111
mpn:
brand:
manufacturer:
MPN:
Description:
2N111 SemiConductor - CASE: Standard MAKE: Generic

Attributes

Key ^Value
@Ic (A)1.0m
@VCE (test) (V)6.0i
C(ob) (F)12p
CaseTO22
Collector Capacitance (Cc)24 pF
Derate (Amb) (W/?C)2.5m
Forward Current Transfer Ratio (hFE), MIN, hfe25
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)5.0u
ManufacturerGeneric
Max. Operating Junction Temperature (Tj)85 ?C
Max. PD (W)130m
Maximum Collector Current |Ic max|0.2 A
Maximum Collector Power Dissipation (Pc)0.13 W
Maximum Collector-Base Voltage |Vcb|30 V
Maximum Collector-Emitter Voltage |Vce|15 V
Maximum Emitter-Base Voltage |Veb|20 V
Oper. Temp (?C) Max.85
Pinout Equivalence NumberN/A
PolarityPNP
SKU777263
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.3.0M
Transition Frequency (ft):1 MHz
TypeTransistor Germanium PNP
Vbr CBO30
Vbr CEO15