Attributes

Key Value
@Ic (A)100m
@VCE (test) (V)1.0
C(ob) (F)25p
CaseTO39
Collector Capacitance (.25 pF
Derate (Amb) (W/?C)5.0m
Forward Current Transfe.40
hfe40
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)100n
ManufacturerGeneric
Max. Operating Junction.175 ?C
Max. PD (W)750m
Maximum Collector Curre.1 A
Maximum Collector Power.3.7 W
Maximum Collector-Base .100 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.7 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityNPN
SKU406658
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.50M
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CBO100
Vbr CEO60
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