Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)2.0
CaseTO126
Derate (Amb) (W/?C)240m
Forward Current Transfe.40
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerMotorola Semiconductor
Max. hFE100
Max. Operating Junction.135 ?C
Max. PD (W)30
Maximum Collector Curre.3 A
Maximum Collector Power.30 W
Maximum Collector-Base .80 V
Maximum Collector-Emitt.80 V
Maximum Emitter-Base Vo.5 V
Min hFE40
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
R(sat) (?)800m
SKU739221
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.3.0M
Transition Frequency (f.3 MHz
TypeTransistor Silicon NPN
Vbr CBO80
Vbr CEO80
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