| @Ic (test) (A), @VCE (V) | 1.0 |
| Case | TO3 |
| Derate Above 25?C | 200m |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE | 100 |
| Ic Max. (A) | 3.0 |
| Icbo Max. @Vcb Max. (A) | 100n |
| Manufacturer | Generic |
| Max. hFE | 250 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 26 |
| Maximum Collector Current |Ic max| | 3 A |
| Maximum Collector Power Dissipation (Pc) | 26 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 40 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 4-30 |
| Polarity | NPN |
| SKU | 313741 |
| Surface Mounted Yes/No | NO |
| Tr Max. (s) | 300n |
| Trans. Freq (Hz) Min. | 70M |
| Transition Frequency (ft): | 30 MHz |
| Type | Transistor Silicon NPN |
| Vbr CEO | 40 |