Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)10
C(ob) (F)3.5p
CaseTO39
Collector Capacitance (.7 pF
Derate (Amb) (W/?C)4.5m
Forward Current Transfe.30
hfe60
Ic Max. (A)30m
Icbo Max. @Vcb Max. (A)1.5u
ManufacturerGeneric
Max. Operating Junction.175 ?C
Max. PD (W)600m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.6 W
Maximum Collector-Base .170 V
Maximum Collector-Emitt.110 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.N/A
PolarityNPN
SKU85450
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.200M
Transition Frequency (f.100M MHz
TypeTransistor Silicon NPN
Vbr CBO170
Vbr CEO90
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