Attributes

Key Value
Capacitance @ Vr, F25pF @ 1V, 1MHz
CategoryDiscrete Semiconductor .
Current - Average Recti.50mA (DC)
Current - Reverse Leaka.3.8 ?A @ 8000 V
Diode TypeSilicon Carbide Schottky
MfrGeneSiC Semiconductor
Mounting TypeThrough Hole
Operating Temperature -.-55?C ~ 175?C
PackageTube
Package / CaseAxial
Part StatusObsolete
Reverse Recovery Time (.0 ns
Series-
SpeedNo Recovery Time > 500m.
Supplier Device Package-
Voltage - DC Reverse (V.8000 V
Voltage - Forward (Vf) .4.6 V @ 50 mA
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