mpn
G4S6508Z
brand
name: Global Power Technology-GPT
manufacturer
name: Global Power Technology-GPT
Attributes
Key
Value
Capacitance @ Vr, F
395pF @ 0V, 1MHz
Category
Discrete Semiconductor .
Current - Average Recti.
30.5A (DC)
Current - Reverse Leaka.
50 ?A @ 650 V
Diode Type
Silicon Carbide Schottky
Mfr
Global Power Technology.
Mounting Type
Surface Mount
Operating Temperature -.
-55?C ~ 175?C
Package
Cut Tape (CT)
Package / Case
8-PowerTDFN
Product Status
Active
Reverse Recovery Time (.
0 ns
Series
-
Speed
No Recovery Time > 500m.
Supplier Device Package
8-DFN (4.9x5.75)
Voltage - DC Reverse (V.
650 V
Voltage - Forward (Vf) .
1.7 V @ 8 A