Attributes

Key Value
Capacitance @ Vr, F395pF @ 0V, 1MHz
CategoryDiscrete Semiconductor .
Current - Average Recti.30.5A (DC)
Current - Reverse Leaka.50 ?A @ 650 V
Diode TypeSilicon Carbide Schottky
MfrGlobal Power Technology.
Mounting TypeSurface Mount
Operating Temperature -.-55?C ~ 175?C
PackageCut Tape (CT)
Package / Case8-PowerTDFN
Product StatusActive
Reverse Recovery Time (.0 ns
Series-
SpeedNo Recovery Time > 500m.
Supplier Device Package8-DFN (4.9x5.75)
Voltage - DC Reverse (V.650 V
Voltage - Forward (Vf) .1.7 V @ 8 A
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