Goford Semiconductor G1K1P06LL

mpnG1K1P06LL
brandname: Goford Semiconductor
manufacturername: Goford Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	25 nC @ 10 V
Input Capacitance (Ciss.	1035 pF @ 30 V
Mfr	Goford Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-23-6
Power Dissipation (Max)	1.5W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	110mOhm @ 2A, 10V
Series	-
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A