Goford Semiconductor GC11N65D5

mpnGC11N65D5
brandname: Goford Semiconductor
manufacturername: Goford Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss.	901 pF @ 50 V
Mfr	Goford Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Power Dissipation (Max)	78W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Series	G
Supplier Device Package	8-DFN (4.9x5.75)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A