| Key ^ | Value |
|---|---|
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 19A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
| Mfr | Harris Corporation |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case, Supplier Device Package | TO-220-3 |
| Power Dissipation (Max) | 55W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V |
| Series | UltraFET? |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4V @ 250?A |