Harris Corporation RF1S9640

mpnRF1S9640
brandname: Harris Corporation
manufacturername: Harris Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Tc)
Drain to Source Voltage.	200 V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	90 nC @ 10 V
Input Capacitance (Ciss.	1100 pF @ 25 V
Mfr	Harris Corporation
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A