Attributes

Key Value
@Ic (test) (A)50m
@VCE (V)4.0
CaseSOT32
Derate Above 25?C6.0m
Forward Current Transfe.100
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)5.0u
ManufacturerHitachi
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)8.0
Maximum Collector Curre.1 A
Maximum Collector Power.8 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.50 V
Maximum Emitter-Base Vo.4 V
Min hFE100
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU543389
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.160M
Transition Frequency (f.160 MHz
TypeTransistor Silicon NPN
Vbr CBO50
Vbr CEO50
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