Attributes

Key Value
@Ic (test) (A)10m
@VCE (test)5.0
CaseSOT33
Collector Capacitance (.3.5 pF
Forward Current Transfe.2000
Ic Max. (A)300m
Icbo Max. @Vcb Max. (A)100n
ManufacturerHitachi
Mat.Silicon Logic
Max. hFE100k
Max. Operating Junction.125 ?C
Max. PD (W)500m
Maximum Collector Curre.0.3 A
Maximum Collector Power.0.5 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.10 V
Min hFE2.0k
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU343792
Surface Mounted Yes/NoNO
t(f) Max. (S)800n-+
t(stor) Max. (S)350n-
Tr Max. (s)60n-
Trans. Freq (Hz) Min.50M
Transition Frequency (f.75 MHz
TypeTransistor Silicon NPN
Vbr CEO30
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