Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)2.0
CaseTO202
Collector Capacitance (.35 pF
Forward Current Transfe.60
Ic Max. (A)1.5
Icbo Max. @Vcb Max. (A)20u
ManufacturerHitachi
Max. hFE200
Max. Operating Junction.165 ?C
Max. PD (W)10
Maximum Collector Curre.1.5 A
Maximum Collector Power.1.2 W
Maximum Collector-Base .35 V
Maximum Collector-Emitt.35 V
Maximum Emitter-Base Vo.5 V
Min hFE60
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-15
PolarityNPN
SKU766274
Surface Mounted Yes/NoNO
t(f) Max. (S)650n-+
Tr Max. (s)140n-
Trans. Freq (Hz) Min.110M
Transition Frequency (f.55 MHz
TypeTransistor Silicon NPN
Vbr CBO35
Vbr CEO35
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